Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs.
Temperature
1.2
Figure 8. On-Resistance Variation vs. Tem-
perature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
* Notes :
1. V GS = 0V
0.5
* Notes :
1. V GS = 10V
T J , Junction Temperature [ C]
T J , Junction Temperature [ C ]
0.8
-100
-50 0 50 100
2. I D = 250 μ A
o
150
0.0
-100
2. I D = 31A
-50 0 50 100 150
o
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case-
Temperature
1000
70
100
10
100 μ s
1ms
10 ms
60
50
40
1
Operation in This Area
is Limited by R DS(on)
* Notes :
DC
30
20
1. T C = 25 C
2. T J = 150 C
0.1
o
o
10
T C , Case Temperature [ C ]
0.01
1
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
400
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
10
0
0.5
10
-1
0.2
0.1
P DM
10
-2
0.05
0.02
0.01
* Notes :
t 1
t 2
1. Z θ JC (t) = 0.48 C/W Max.
o
Single pulse
2. Duty Factor, D=t 1 /t 2
3. T JM - T C = P DM * Z θ JC (t)
10
10
10
10
- 3
10
- 5
10
-4
-3
10
-2
-1
0
10
1
Rectangular Pulse Duration [sec]
?200 6 Fairchild Semiconductor Corporation
FDB2614 Rev. C 1
4
www.fairchildsemi.com
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